4Gb: x8, x16 Automotive DDR3L SDRAM
Description
Automotive DDR3L SDRAM
MT41K512M8 – 64 Meg x 8 x 8 banks
MT41K256M16 – 32 Meg x 16 x 8 banks
Description
Options
• Configuration
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) –
x8
– 78-ball
(8mm
x
10.5mm)
• FBGA package (Pb-free) –
x16
– 96-ball (8mm x 14mm)
• Timing – cycle time
– 1.07ns @ CL = 13
(DDR3-1866)
• Automotive grade
– AEC-Q100
– PPAP submission
• Operating temperature
– Industrial (–40°C ≤ TC ≤
+95°C)
– Automotive (–40°C ≤ TC
≤ +105°C)
– Ultra-high (–40°C ≤ TC ≤
+125°C)3
• Revision
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM (Die
Rev :E) data sheet specifications when running in 1.5V
compatible mode.
Features
• VDD = VDDQ = 1.35V (1.283–1.45V)
• Backward compatible to VDD = VDDQ = 1.5V ±0.075V
– Supports DDR3L devices to be backward compatible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of -40°C to +125°C
– 64ms, 8192-cycle refresh at -40°C to +85°C
– 32ms at +85°C to +105°C
– 16ms at +105°C to +115°C
– 8ms at +115°C to +125°C
• Self refresh temperature (SRT)
• Automatic self refresh (ASR)
• Write leveling
• Multipurpose register
• Output driver calibration
• AEC-Q100
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
Marking
512M8
256M16
DA
TW
-107
A
IT
AT
UT
:P
Notes: 1. Not all options listed can be combined to define
an offered product. Use the part catalog search on
http://www.micron.com for available offerings.
2. The data sheet does not support ×4 mode even
though ×4 mode description exists in the
following sections.
3. The UT option use based on automotive usage
model. Please contact Micron sales representative
if you have questions.
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
4Gb: x8, x16 Automotive DDR3L SDRAM
Description
Table 1: Key Timing Parameters
Speed Grade
Data Rate (MT/s)
Target tRCD-tRP-CL
-107
1866
13-13-13
tRCD
tRP
(ns)
13.91
(ns)
CL (ns)
13.91
13.91
Table 2: Addressing
Parameter
512 Meg x 8
256 Meg x 16
Configuration
64 Meg x 8 x 8 banks
32 Meg x 16 x 8 banks
Refresh count
8K
8K
Row address
64K (A[15:0])
32K (A[14:0])
Bank address
8 (BA[2:0])
8 (BA[2:0])
Column address
1K (A[9:0])
1K (A[9:0])
1KB
2KB
Page size
Figure 1: DDR3L Part Numbers
Example Part Number: MT41K512M8DA-107AAT:P
Configuration
Package
Speed
Revision
{
MT41K
:
Configuration
Mark
512 Meg x 8
512M8
:P
256 Meg x 16 256M16
Revision
Temperature
Industrial temperature
Package
Mark
78-ball FBGA, 8mm x 10.5mm
DA
96-ball FBGA, 8mm x 14mm
TW
Speed Grade
tCK = 1.07ns, CL = 13
Mark
IT
Automotive temperature
AT
Ultra-high temperature
UT
Mark
Certification
107
Automotive
Mark
A
Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on
http://www.micron.com for available offerings.
FBGA Part Marking Decoder
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Contents
Important Notes and Warnings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Industrial Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Automotive Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Ultra-high Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
General Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Functional Block Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Ball Assignments and Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Absolute Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Input/Output Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Electrical Specifications – IDD Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Electrical Characteristics – Operating IDD Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Electrical Specifications – DC and AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Input Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
DDR3L 1.35V AC Overshoot/Undershoot Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
DDR3L 1.35V Slew Rate Definitions for Differential Input Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
ODT Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
1.35V ODT Resistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
ODT Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
ODT Timing Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Output Driver Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
34 Ohm Output Driver Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
DDR3L 34 Ohm Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
DDR3L 34 Ohm Output Driver Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
DDR3L Alternative 40 Ohm Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
DDR3L 40 Ohm Output Driver Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Output Characteristics and Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Reference Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Slew Rate Definitions for Single-Ended Output Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Slew Rate Definitions for Differential Output Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Speed Bin Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Electrical Characteristics and AC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Command and Address Setup, Hold, and Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Data Setup, Hold, and Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Commands – Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
DESELECT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
NO OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
ZQ CALIBRATION LONG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
ZQ CALIBRATION SHORT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
ACTIVATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
DLL Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Input Clock Frequency Change . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Write Leveling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Write Leveling Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Write Leveling Mode Exit Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Voltage Initialization/Change . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
VDD Voltage Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Mode Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Mode Register 0 (MR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Burst Length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Burst Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
DLL RESET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Write Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Precharge Power-Down (Precharge PD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
CAS Latency (CL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Mode Register 1 (MR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
DLL Enable/DLL Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Output Drive Strength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
OUTPUT ENABLE/DISABLE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
TDQS Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
On-Die Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
WRITE LEVELING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
POSTED CAS ADDITIVE Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Mode Register 2 (MR2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
CAS WRITE Latency (CWL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
AUTO SELF REFRESH (ASR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
SELF REFRESH TEMPERATURE (SRT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
SRT vs. ASR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
DYNAMIC ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Mode Register 3 (MR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
MULTIPURPOSE REGISTER (MPR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
MPR Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
MPR Register Address Definitions and Bursting Order . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
MPR Read Predefined Pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
MODE REGISTER SET (MRS) Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
ZQ CALIBRATION Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
ACTIVATE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
READ Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
WRITE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
DQ Input Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
PRECHARGE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
SELF REFRESH Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
Extended Temperature Usage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Power-Down Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
On-Die Termination (ODT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Functional Representation of ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Nominal ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Dynamic ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Dynamic ODT Special Use Case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Synchronous ODT Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
ODT Latency and Posted ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
ODT Off During READs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
Asynchronous ODT Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
Rev. I – 09/2021 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Rev. H – 03/2021 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Rev. G – 08/2019 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Rev. F – 02/2018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Rev. E – 12/2017 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Rev. D – 02/2017 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Rev. C – 05/2016 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Rev. B – 04/2016 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Rev. A – 12/2015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
List of Figures
Figure 1: DDR3L Part Numbers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Figure 2: Simplified State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 3: 1 Gig x 4 Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 4: 512 Meg x 8 Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5: 256 Meg x 16 Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 6: 78-Ball FBGA – x4, x8 (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 7: 96-Ball FBGA – x16 (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 8: 78-Ball FBGA – x4, x8 (DA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 9: 96-Ball FBGA – x16 (TW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 10: Thermal Measurement Point . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 11: DDR3L 1.35V Input Signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 12: Overshoot. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 13: Undershoot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 14: VIX for Differential Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 15: Single-Ended Requirements for Differential Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 16: Definition of Differential AC-Swing and tDVAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 17: Nominal Slew Rate Definition for Single-Ended Input Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 18: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# . . . . . . . . . . 53
Figure 19: ODT Levels and I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 20: ODT Timing Reference Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Figure 21: tAON and tAOF Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 22: tAONPD and tAOFPD Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 23: tADC Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 24: Output Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 25: DQ Output Signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Figure 26: Differential Output Signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Figure 27: Reference Output Load for AC Timing and Output Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Figure 28: Nominal Slew Rate Definition for Single-Ended Output Signals. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Figure 29: Nominal Differential Output Slew Rate Definition for DQS, DQS# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Figure 30: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 31: Nominal Slew Rate for tIH (Command and Address – Clock) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Figure 32: Tangent Line for tIS (Command and Address – Clock) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Figure 33: Tangent Line for tIH (Command and Address – Clock) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Figure 34: Nominal Slew Rate and tVAC for tDS (DQ – Strobe) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Figure 35: Nominal Slew Rate for tDH (DQ – Strobe) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Figure 36: Tangent Line for tDS (DQ – Strobe) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Figure 37: Tangent Line for tDH (DQ – Strobe). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Figure 38: Refresh Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Figure 39: DLL Enable Mode to DLL Disable Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Figure 40: DLL Disable Mode to DLL Enable Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Figure 41: DLL Disable tDQSCK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Figure 42: Change Frequency During Precharge Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Figure 43: Write Leveling Concept. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Figure 44: Write Leveling Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 45: Write Leveling Exit Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Figure 46: Initialization Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Figure 47: VDD Voltage Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Figure 48: MRS to MRS Command Timing (tMRD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Figure 49: MRS to nonMRS Command Timing (tMOD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Figure 50: Mode Register 0 (MR0) Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Figure 51: READ Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Figure 52: Mode Register 1 (MR1) Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 53: READ Latency (AL = 5, CL = 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 54: Mode Register 2 (MR2) Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 55: CAS WRITE Latency. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Figure 56: Mode Register 3 (MR3) Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 57: Multipurpose Register (MPR) Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Figure 58: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout . . . . . . . . . . . . . . . . . . . . . . . . 141
Figure 59: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout . . . . . . . . . . . . . . . . . 142
Figure 60: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble . . . . . . . . . . . . . . . . . . . . . . . 143
Figure 61: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble . . . . . . . . . . . . . . . . . . . . . . . 144
Figure 62: ZQ CALIBRATION Timing (ZQCL and ZQCS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Figure 63: Example: Meeting tRRD (MIN) and tRCD (MIN). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Figure 64: Example: tFAW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Figure 65: READ Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Figure 66: Consecutive READ Bursts (BL8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Figure 67: Consecutive READ Bursts (BC4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 68: Nonconsecutive READ Bursts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Figure 69: READ (BL8) to WRITE (BL8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Figure 70: READ (BC4) to WRITE (BC4) OTF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
Figure 71: READ to PRECHARGE (BL8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Figure 72: READ to PRECHARGE (BC4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Figure 73: READ to PRECHARGE (AL = 5, CL = 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Figure 74: READ with Auto Precharge (AL = 4, CL = 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Figure 75: Data Output Timing – tDQSQ and Data Valid Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Figure 76: Data Strobe Timing – READs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Figure 77: Method for Calculating tLZ and tHZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Figure 78: tRPRE Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Figure 79: tRPST Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Figure 80: tWPRE Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Figure 81: tWPST Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Figure 82: WRITE Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Figure 83: Consecutive WRITE (BL8) to WRITE (BL8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Figure 84: Consecutive WRITE (BC4) to WRITE (BC4) via OTF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Figure 85: Nonconsecutive WRITE to WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Figure 86: WRITE (BL8) to READ (BL8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Figure 87: WRITE to READ (BC4 Mode Register Setting) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 88: WRITE (BC4 OTF) to READ (BC4 OTF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Figure 89: WRITE (BL8) to PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 90: WRITE (BC4 Mode Register Setting) to PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 91: WRITE (BC4 OTF) to PRECHARGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Figure 92: Data Input Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Figure 93: Self Refresh Entry/Exit Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Figure 94: Active Power-Down Entry and Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Figure 95: Precharge Power-Down (Fast-Exit Mode) Entry and Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Figure 96: Precharge Power-Down (Slow-Exit Mode) Entry and Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Figure 97: Power-Down Entry After READ or READ with Auto Precharge (RDAP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
Figure 98: Power-Down Entry After WRITE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
Figure 99: Power-Down Entry After WRITE with Auto Precharge (WRAP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
Figure 100: REFRESH to Power-Down Entry. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
Figure 101: ACTIVATE to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Figure 102: PRECHARGE to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Figure 103: MRS Command to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Figure 104: Power-Down Exit to Refresh to Power-Down Entry. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Figure 105: RESET Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Figure 106: On-Die Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Figure 107: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Figure 108: Dynamic ODT: Without WRITE Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
Figure 109: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8. . . . . . . . . 195
Figure 110: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 . . . . . . . . . . . . . . . . . 196
Figure 111: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 . . . . . . . . . . . . . . . . . 196
Figure 112: Synchronous ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Figure 113: Synchronous ODT (BC4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
Figure 114: ODT During READs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
Figure 115: Asynchronous ODT Timing with Fast ODT Transition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Figure 116: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry. . . . . . . . . 208
Figure 117: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit . . . . . . . . . . 210
Figure 118: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping . . . . . . . . . . . . . . 212
Figure 119: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping . . . . . . . . . . . . . 213
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
List of Tables
Table 1: Key Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table 2: Addressing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 4: 96-Ball FBGA – x16 Ball Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 5: Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 6: DDR3L Input/Output Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 7: Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 8: Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 9: Timing Parameters Used for IDD Measurements – Clock Units . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 10: IDD0 Measurement Loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 11: IDD1 Measurement Loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 12: IDD Measurement Conditions for Power-Down Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 13: IDD2N and IDD3N Measurement Loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 14: IDD2NT Measurement Loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 15: IDD4R Measurement Loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 16: IDD4W Measurement Loop. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 17: IDD5B Measurement Loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 18: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 19: IDD7 Measurement Loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 20: IDD Maximum Limits Die Rev. P for 1.35V/1.5V Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 21: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 22: DDR3L 1.35V DC Electrical Characteristics and Input Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 23: DDR3L 1.35V Input Switching Conditions – Command and Address . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 24: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) . . . . . . . . . . . . . . . . . . . . 46
Table 25: DDR3L Control and Address Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 26: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 27: DDR3L 1.35V – Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback. 50
Table 28: Single-Ended Input Slew Rate Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Table 29: DDR3L 1.35V Differential Input Slew Rate Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 30: On-Die Termination DC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Table 31: 1.35V RTT Effective Impedance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Table 32: ODT Sensitivity Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 33: ODT Temperature and Voltage Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 34: ODT Timing Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 35: DDR3L(1.35V) Reference Settings for ODT Timing Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 36: DDR3L 34 Ohm Driver Impedance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 37: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 38: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.35V. . . . . . . . . . . . . . . . . . . . . . . . 62
Table 39: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.45V. . . . . . . . . . . . . . . . . . . . . . . . 62
Table 40: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.283 . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 41: DDR3L 34 Ohm Output Driver Sensitivity Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 42: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 43: DDR3L 40 Ohm Driver Impedance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 44: DDR3L 40 Ohm Output Driver Sensitivity Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 45: 40 Ohm Output Driver Voltage and Temperature Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 46: DDR3L Single-Ended Output Driver Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Table 47: DDR3L Differential Output Driver Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 48: DDR3L Differential Output Driver Characteristics VOX(AC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 49: Single-Ended Output Slew Rate Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 50: Differential Output Slew Rate Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Table 51: DDR3L-1066 Speed Bins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
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4Gb: x8, x16 Automotive DDR3L SDRAM
Table 52: DDR3L-1333 Speed Bins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 53: DDR3L-1600 Speed Bins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 54: DDR3L-1866 Speed Bins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 55: DDR3L-2133 Speed Bins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Table 56: Electrical Characteristics and AC Operating Conditions for Speed Extensions. . . . . . . . . . . . . . . . . . . . . . . . 80
Table 57: DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced – AC/DC-Based . . . . . . . . . . . 89
Table 58: DDR3L-800/1066 Derating Values tIS/tIH – AC160/DC90-Based. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 59: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC135/DC90-Based . . . . . . . . . . . . . . . . . . . . . . 90
Table 60: DDR3L-1866/2133 Derating Values for tIS/tIH – AC125/DC90-Based. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 61: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL[AC]) for Valid ADD/CMD Transition . . 91
Table 62: DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based . . . . . . . . . . . . . . . . 97
Table 63: DDR3L Derating Values for tDS/tDH – AC160/DC90-Based . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 64: DDR3L Derating Values for tDS/tDH – AC135/DC90-Based . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 65: DDR3L Derating Values for tDS/tDH – AC130/DC90-Based at 2V/ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 66: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL(AC)) for Valid DQ Transition . . . . . . . . 100
Table 67: Truth Table – Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 68: Truth Table – CKE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 69: READ Command Summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 70: WRITE Command Summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 71: READ Electrical Characteristics, DLL Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 72: Write Leveling Matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 73: Burst Order . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 74: MPR Functional Description of MR3 Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 75: MPR Readouts and Burst Order Bit Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 76: Self Refresh Temperature and Auto Self Refresh Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Table 77: Self Refresh Mode Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Table 78: Command to Power-Down Entry Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Table 79: Power-Down Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Table 80: Truth Table – ODT (Nominal). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Table 81: ODT Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Table 82: Write Leveling with Dynamic ODT Special Case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Table 83: Dynamic ODT Specific Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Table 84: Mode Registers for RTT,nom . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Table 85: Mode Registers for RTT(WR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
Table 86: Timing Diagrams for Dynamic ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
Table 87: Synchronous ODT Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
Table 88: Asynchronous ODT Timing Parameters for All Speed Bins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Table 89: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period. . . . . . . . . . . . . . . . . . . . . . . 207
CCMTD-1725822587-10208
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4Gb: x8, x16 Automotive DDR3L SDRAM
Important Notes and Warnings
Important Notes and Warnings
Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,
including without limitation specifications and product descriptions. This document supersedes and replaces all
information supplied prior to the publication hereof. You may not rely on any information set forth in this document
if you obtain the product described herein from any unauthorized distributor or other source not authorized by
Micron.
Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, death, or property damage resulting directly or indirectly from any use of
non-automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and
conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron
products are not designed or intended for use in automotive applications unless specifically designated by Micron
as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to
indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'
fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage
resulting from any use of non-automotive-grade products in automotive applications.
Critical Applications. Products are not authorized for use in applications in which failure of the Micron component
could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical
Applications"). Customer must protect against death, personal injury, and severe property and environmental
damage by incorporating safety design measures into customer's applications to ensure that failure of the Micron
component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron component for any critical application, customer and distributor shall indemnify and hold harmless Micron and its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims, costs,
damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product
liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its
subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the Micron
product.
Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,
applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT
FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE
WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR
PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included in
customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component.
Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential
damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such damages are based on tort, warranty, breach
of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly authorized representative.
CCMTD-1725822587-10208
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4Gb: x8, x16 Automotive DDR3L SDRAM
State Diagram
State Diagram
Figure 2: Simplified State Diagram
CKE L
Power
applied
Power
on
MRS, MPR,
write
leveling
Initialization
Reset
procedure
Self
refresh
SRE
ZQCL
From any
state
RESET
ZQ
calibration
MRS
SRX
REF
ZQCL/ZQCS
Refreshing
Idle
PDE
ACT
PDX
Active
powerdown
Precharge
powerdown
Activating
PDX
CKE L
CKE L
PDE
Bank
active
WRITE
WRITE
READ
WRITE AP
READ AP
READ
Writing
READ
WRITE
WRITE AP
Reading
READ AP
WRITE AP
READ AP
PRE, PREA
Writing
PRE, PREA
PRE, PREA
Reading
Precharging
Automatic
sequence
Command
sequence
ACT = ACTIVATE
MPR = Multipurpose register
MRS = Mode register set
PDE = Power-down entry
PDX = Power-down exit
PRE = PRECHARGE
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PREA = PRECHARGE ALL
READ = RD, RDS4, RDS8
READ AP = RDAP, RDAPS4, RDAPS8
REF = REFRESH
RESET = START RESET PROCEDURE
SRE = Self refresh entry
12
SRX = Self refresh exit
WRITE = WR, WRS4, WRS8
WRITE AP = WRAP, WRAPS4, WRAPS8
ZQCL = ZQ LONG CALIBRATION
ZQCS = ZQ SHORT CALIBRATION
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4Gb: x8, x16 Automotive DDR3L SDRAM
Functional Description
Functional Description
DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data
rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words
per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists
of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data
capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data
is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes.
The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and
CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are
registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the
WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ
preamble.
Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location
and continue for a programmed number of locations in a programmed sequence. Accesses begin with
the registration of an ACTIVATE command, which is then followed by a READ or WRITE command.
The address bits registered coincident with the ACTIVATE command are used to select the bank and
row to be accessed. The address bits registered coincident with the READ or WRITE commands are
used to select the bank and the starting column location for the burst access.
The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be enabled to
provide a self-timed row precharge that is initiated at the end of the burst access.
As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM allows for
concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time.
A self refresh mode is provided, along with a power-saving, power-down mode.
Industrial Temperature
The industrial temperature (IT) device requires that the case temperature not exceed
–40°C or 95°C. JEDEC specifications require the refresh rate to double when TCexceeds 85°C; this also
requires use of the high-temperature self refresh option. Additionally, ODT resistance and the
input/output impedance must be derated when TCis < 0°C or >85°C.
Automotive Temperature
The automotive temperature (AT) device requires that the case temperature not exceed
–40°C or 105°C. JEDEC specifications require the refresh rate to double when TCexceeds 85°C; this also
requires use of the high-temperature self refresh option. Additionally, ODT resistance and the
input/output impedance must be derated when TCis < 0°C or >85°C.
Ultra-high Temperature
The Ultra-high temperature (UT) device requires that the case temperature not exceed
–40°C or 125°C. JEDEC specifications require the refresh rate to double when TCexceeds 85°C; this also
requires use of the high-temperature auto refresh option. When Tc > +105C, the refresh rate must be
increased to 8X. Self-refresh mode is not available for Tc >+105°C. Additionally, ODT resistance and the
input/output impedance must be derated when TCis < 0°C or >85°C.
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
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4Gb: x8, x16 Automotive DDR3L SDRAM
Functional Description
General Notes
• The functionality and the timing specifications discussed in this data sheet are for the DLL enable
mode of operation (normal operation).
• Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ is to be interpreted as
any and all DQ collectively, unless specifically stated otherwise.
• The terms “DQS” and “CK” found throughout this data sheet are to be interpreted as DQS, DQS# and
CK, CK# respectively, unless specifically stated otherwise.
• Complete functionality may be described throughout the document; any page or diagram may have
been simplified to convey a topic and may not be inclusive of all requirements.
• Any specific requirement takes precedence over a general statement.
• Any functionality not specifically stated is considered undefined, illegal, and not supported, and can
result in unknown operation.
• Row addressing is denoted as A[n:0]. For example,1Gb: n = 12 (x16); 1Gb: n = 13 (x4, x8); 2Gb: n = 13
(x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4, x8).
• Dynamic ODT has a special use case: when DDR3 devices are architected for use in a single rank
memory array, the ODT ball can be wired HIGH rather than routed. Refer to the Dynamic ODT
Special Use Case section.
• A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be used, use the
lower byte for data transfers and terminate the upper byte as noted:
– Connect UDQS to ground via 1kΩ* resistor.
– Connect UDQS# to VDD via 1kΩ* resistor.
– Connect UDM to VDD via 1kΩ* resistor.
– Connect DQ[15:8] individually to either VSS, VDD, or VREF via 1kΩ resistors,* or float DQ[15:8].
*If ODT is used, 1kΩ resistor should be changed to 4x that of the selected ODT.
CCMTD-1725822587-10208
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4Gb: x8, x16 Automotive DDR3L SDRAM
Functional Block Diagrams
Functional Block Diagrams
DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as
an 8-bank DRAM.
Figure 3: 1 Gig x 4 Functional Block Diagram
ODT
control
ODT
ZQ
RZQ
ZQ CAL
RESET#
ZQCL, ZQCS
CKE
VSSQ
To pull-up/pull-down
networks
Control
logic
A12
CK, CK#
VDDQ/2
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
19
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
16
16
Bank 0
rowaddress
latch
and
decoder
65,536
DLL
(1 . . . 4)
32
READ
FIFO
and
data
MUX
4
DQ[3:0]
READ
drivers
VDDQ/2
32
BC4
BC4
OTF
I/O gating
DM mask logic
A[15:0]
BA[2:0]
19
Address
register
3
RTT,nom
sw1
sw2
DM
(1, 2)
Columnaddress
counter/
latch
DQS, DQS#
VDDQ/2
32
Data
interface
Column
decoder
4
Data
WRITE
drivers
and
input
logic
8
RTT,nom
sw1
RTT(WR)
sw2
DM
3
Columns 0, 1, and 2
CK, CK#
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RTT(WR)
Bank
control
logic
256
(x32)
11
DQ[3:0]
DQS, DQS#
8,192
3
sw2
sw1
Bank 0
memory
array
(65,536 x 256 x 32)
Sense amplifiers
RTT(WR)
CK, CK#
16
Rowaddress
MUX
RTT,nom
Columns 0, 1, and 2
15
Column 2
(select upper or
lower nibble for BC4)
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4Gb: x8, x16 Automotive DDR3L SDRAM
Functional Block Diagrams
Figure 4: 512 Meg x 8 Functional Block Diagram
ODT
control
ODT
ZQ
RZQ
Control
logic
CKE
VSSQ
To ODT/output drivers
ZQ CAL
RESET#
ZQCL, ZQCS
A12
VDDQ/2
CK, CK#
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
CK, CK#
sw1
(1 . . . 8)
19
Bank 0
Memory
array
(65,536 x 128 x 64)
Bank 0
rowaddress
65,536
latch
and
decoder
16
16
Sense amplifiers
sw2
DLL
16
Rowaddress
MUX
64
DQ8
READ
FIFO
and
data
MUX
8
19
Address
register
DQ[7:0]
DQS, DQS#
VDDQ/2
64
BC4
OTF
RTT,nom
sw1
RTT(WR)
sw2
I/O gating
DM mask logic
3
A[15:0]
BA[2:0]
TDQS#
DQ[7:0]
Read
drivers
BC4
8,192
RTT(WR)
RTT,nom
Columns 0, 1, and 2
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
(1, 2)
Bank
control
logic
3
VDDQ/2
(128
x64)
64
8
Data
interface
Data
Column
decoder
Columnaddress
counter/
latch
10
DQS/DQS#
Write
drivers
and
input
logic
RTT,nom
sw1
RTT(WR)
sw2
7
DM/TDQS
(shared pin)
3
Columns 0, 1, and 2
CK, CK#
Column 2
(select upper or
lower nibble for BC4)
Figure 5: 256 Meg x 16 Functional Block Diagram
ODT
control
ODT
ZQ
RZQ
ZQ CAL
RESET#
Control
logic
CKE
VSSQ
To ODT/output drivers
ZQCL, ZQCS
A12
VDDQ/2
CK, CK#
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
18
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
15
15
Bank 0
rowaddress
latch
and
decoder
32,768
DLL
(1 . . . 16)
128
READ
FIFO
and
data
MUX
16
DQ[15:0]
READ
drivers
LDQS, LDQS#, UDQS, UDQS#
BC4
128
18
Address
register
3
sw2
LDQS, LDQS#
Bank
control
logic
(1 . . . 4)
Columnaddress
counter/
latch
UDQS, UDQS#
VDDQ/2
128
Data
interface
Column
decoder
16
Data
WRITE
drivers
and
input
logic
RTT,nom
sw1
RTT(WR)
sw2
7
(1, 2)
LDM/UDM
3
Columns 0, 1, and 2
CK, CK#
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
RTT(WR)
I/O gating
DM mask logic
(128
x128)
10
RTT,nom
sw1
BC4
OTF
3
DQ[15:0]
VDDQ/2
Sense amplifiers
A[14:0]
BA[2:0]
sw2
sw1
Bank 0
memory
array
(32,768 x 128 x 128)
16,384
RTT(WR)
CK, CK#
13
Rowaddress
MUX
RTT,nom
Column 0, 1, and 2
16
Column 2
(select upper or
lower nibble for BC4)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Ball Assignments and Descriptions
Ball Assignments and Descriptions
Figure 6: 78-Ball FBGA – x4, x8 (Top View)
1
2
3
VSS
VDD
VSS
VDDQ
4
5
6
7
8
9
NC
NF, NF/TDQS#
VSS
VDD
VSSQ
DQ0
DM, DM/TDQS
VSSQ
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
NF, DQ6 DQS#
VDD
VSS
VSSQ
A
B
C
D
VSSQ
E
VREFDQ
NF, DQ7 NF, DQ5
VDDQ NF, DQ4
VDDQ
F
NC
VSS
RAS#
CK
VSS
NC
ODT
VDD
CAS#
CK#
VDD
CKE
NC
CS#
WE#
A10/AP
ZQ
NC
VSS
BA0
BA2
A15
VREFCA
VSS
VDD
A3
A0
A12/BC#
BA1
VDD
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS
RESET#
A13
A14
A8
VSS
G
H
J
K
L
M
N
Notes: 1. Ball descriptions listed in the 78-Ball FBGA – x4, x8 Ball Descriptions table are listed as “x4, x8” if unique; otherwise,
x4 and x8 are the same.
2. A comma separates the configuration; a slash defines a selectable function.
Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration
only—selectable between NF or TDQS# via MRS (symbols are defined in the 78-Ball FBGA – x4, x8 Ball Descriptions
table).
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Ball Assignments and Descriptions
Figure 7: 96-Ball FBGA – x16 (Top View)
1
2
3
VDDQ
DQ13
VSSQ
4
5
6
7
8
9
DQ15
DQ12
VDDQ
VSS
VDD
VSS
UDQS#
DQ14
VSSQ
VDDQ
DQ11
DQ9
UDQS
DQ10
VDDQ
VSSQ
VDDQ
UDM
DQ8
VSSQ
VDD
VSS
VSSQ
DQ0
LDM
VSSQ
VDDQ
VDDQ
DQ2
LDQS
DQ1
DQ3
VSSQ
VSSQ
DQ6
LDQS#
VDD
VSS
VSSQ
VREFDQ
VDDQ
DQ4
DQ7
DQ5
VDDQ
NC
VSS
RAS#
CK
VSS
NC
ODT
VDD
CAS#
CK#
VDD
CKE
NC
CS#
WE#
A10/AP
ZQ
NC
VSS
BA0
BA2
NC
VREFCA
VSS
VDD
A3
A0
A12/BC#
BA1
VDD
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS
RESET#
A13
A14
A8
VSS
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
Notes: 1. Ball descriptions listed in the 96-Ball FBGA – x16 Ball Descriptions table are listed as “x4, x8” if unique; otherwise,
x4 and x8 are the same.
2. A comma separates the configuration; a slash defines a selectable function.
Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration
only—selectable between NF or TDQS# via MRS (symbols are defined in the 78-Ball FBGA – x4, x8 Ball Descriptions
table).
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Ball Assignments and Descriptions
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions
Symbol
Type
Description
A[15:13], A12/BC#,
A11, A10/AP, A[9:0]
Input
Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective bank. A10 sampled during a
PRECHARGE command determines whether the PRECHARGE applies to one bank
(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also
provide the op-code during a LOAD MODE command. Address inputs are referenced
to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during
READ and WRITE commands to determine whether burst chop (on-the-fly) will be
performed (HIGH = BL8 or no burst chop, LOW = BC4). See the Truth Table – Command table.
BA[2:0]
Input
Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE,
or PRECHARGE command is being applied. BA[2:0] define which mode
register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command.
BA[2:0] are referenced to VREFCA.
CK, CK#
Input
Clock: CK and CK# are differential clock inputs. All control and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of CK#.
Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE
Input
Clock enable: CKE enables (registered HIGH) and disables (registered LOW)
internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/
disabled is dependent upon the DDR3 SDRAM configuration and operating mode.
Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations
(all banks idle), or active power-down (row active in any bank). CKE is synchronous
for power-down entry and exit and for self refresh entry. CKE is asynchronous for self
refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are
disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA.
CS#
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS#
provides for external rank selection on systems with multiple ranks. CS# is considered
part of the command code. CS# is referenced to VREFCA.
DM
Input
Input data mask: DM is an input mask signal for write data. Input data is masked
when DM is sampled HIGH along with the input data during a write access.
Although the DM ball is input-only, the DM loading is designed to match that of the
DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on
the x8.
ODT
Input
On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal
operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#,
and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is
ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE#
Input
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered and are referenced to VREFCA.
RESET#
Input
DQ[3:0]
I/O
Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input
receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDD and
DC LOW ≤ 0.2 × VDDQ. RESET# assertion and desertion are asynchronous.
CCMTD-1725822587-10208
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Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are
referenced to VREFDQ.
19
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Ball Assignments and Descriptions
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions
Symbol
Type
DQ[7:0]
I/O
Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are
referenced to VREFDQ.
DQS, DQS#
I/O
Data strobe: Output with read data. Edge-aligned with read data. Input with write
data. Center-aligned to write data.
TDQS, TDQS#
Output
Termination data strobe: Applies to the x8 configuration only. When TDQS is
enabled, DM is disabled, and the TDQS and TDQS# balls provide termination
resistance.
VDD
Supply
VDDQ
Supply
Power supply: 1.5V ±0.075V.
VREFCA
Supply
VREFDQ
Supply
Reference voltage for data: VREFDQ must be maintained at all times (excluding self
refresh) for proper device operation.
VSS
Supply
Ground.
VSSQ
Supply
DQ ground: Isolated on the device for improved noise immunity.
ZQ
Reference
NC
–
No connect: These balls should be left unconnected (the ball has no connection to
the DRAM or to other balls).
NF
–
No function: When configured as a x4 device, these balls are NF. When configured
as a x8 device, these balls are defined as TDQS#, DQ[7:4].
CCMTD-1725822587-10208
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Description
DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immunity.
Reference voltage for control, command, and address: VREFCA must be
maintained at all times (including self refresh) for proper device operation.
External reference ball for output drive calibration: This ball is tied to an
external 240Ω resistor (RZQ), which is tied to VSSQ.
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Ball Assignments and Descriptions
Table 4: 96-Ball FBGA – x16 Ball Descriptions
Symbol
Type
Description
A[14:13], A12/BC#,
A11, A10/AP, A[9:0]
Input
Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective bank. A10 sampled during a
PRECHARGE command determines whether the PRECHARGE applies to one bank
(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also
provide the op-code during a LOAD MODE command. Address inputs are referenced
to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during
READ and WRITE commands to determine whether burst chop (on-the-fly) will be
performed (HIGH = BL8 or no burst chop, LOW = BC4). See the Truth Table - Command table.
BA[2:0]
Input
Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE,
or PRECHARGE command is being applied. BA[2:0] define which mode
register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command.
BA[2:0] are referenced to VREFCA.
CK, CK#
Input
Clock: CK and CK# are differential clock inputs. All control and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of CK#.
Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE
Input
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal
circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is
dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE
LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks
idle), or active power-down (row active in any bank). CKE is synchronous for
power-down entry and exit and for self refresh entry. CKE is asynchronous for self
refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled
during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during
SELF REFRESH. CKE is referenced to VREFCA.
CS#
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered
part of the command code. CS# is referenced to VREFCA.
LDM
Input
Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte
input data is masked when LDM is sampled HIGH along with the input data during a
write access. Although the LDM ball is input-only, the LDM loading is
designed to match that of the DQ and DQS balls. LDM is referenced to VREFDQ.
ODT
Input
On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal
operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#,
UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS, and
NF/TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for the
x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE#
Input
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered and are referenced to VREFCA.
RESET#
Input
Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input
receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDD and
DC LOW ≤ 0.2 × VDDQ. RESET# assertion and desertion are asynchronous.
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Ball Assignments and Descriptions
Table 4: 96-Ball FBGA – x16 Ball Descriptions
Symbol
Type
Description
UDM
Input
Input data mask: UDM is an upper-byte, input mask signal for write data.
Upper-byte input data is masked when UDM is sampled HIGH along with that input
data during a WRITE access. Although the UDM ball is input-only, the UDM loading is
designed to match that of the DQ and DQS balls. UDM is referenced to V REFDQ.
DQ[7:0]
I/O
Data input/output: Lower byte of bidirectional data bus for the x16 configuration.
DQ[7:0] are referenced to VREFDQ.
DQ[15:8]
I/O
Data input/output: Upper byte of bidirectional data bus for the x16 configuration.
DQ[15:8] are referenced to VREFDQ.
LDQS, LDQS#
I/O
Lower byte data strobe: Output with read data. Edge-aligned with read data.
Input with write data. Center-aligned to write data.
UDQS, UDQS#
I/O
Upper byte data strobe: Output with read data. Edge-aligned with read data.
Input with write data. DQS is center-aligned to write data.
VDD
Supply
VDDQ
Supply
VREFCA
Supply
VREFDQ
Supply
Reference voltage for data: VREFDQ must be maintained at all times (excluding self
refresh) for proper device operation.
VSS
Supply
Ground.
VSSQ
Supply
DQ ground: Isolated on the device for improved noise immunity.
ZQ
Reference
NC
–
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
Power supply: 1.5V ±0.075V.
DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immunity.
Reference voltage for control, command, and address: VREFCA must be
maintained at all times (including self refresh) for proper device operation.
External reference ball for output drive calibration: This ball is tied to an
external 240Ω resistor (RZQ), which is tied to VSSQ.
No connect: These balls should be left unconnected (the ball has no connection to
the DRAM or to other balls).
22
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Package Dimensions
Package Dimensions
Figure 8: 78-Ball FBGA – x4, x8 (DA)
0.155
Seating plane
A
0.12 A
1.8 CTR
Nonconductive
overmold
78X Ø0.47
Dimensions apply
to solder balls postreflow on Ø0.42 SMD
ball pads.
Ball A1 ID
(covered by SR)
9 8 7
Ball A1 ID
3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
10.5 ±0.1
9.6 CTR
0.8 TYP
1.1 ±0.1
0.8 TYP
6.4 CTR
0.29 MIN
8 ±0.1
Notes: 1. All dimensions are in millimeters.
2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
23
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Package Dimensions
Figure 9: 96-Ball FBGA – x16 (TW)
0.155
Seating plane
0.12 A
A
1.8 CTR
Nonconductive
overmold
96X Ø0.47
Dimensions apply
to solder balls postreflow on Ø0.42 SMD
ball pads.
Ball A1 ID
(covered by SR)
9 8 7
Ball A1 ID
3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
14 ±0.1
12 CTR
0.8 TYP
1.1 ±0.1
0.8 TYP
6.4 CTR
0.34 ±0.05
8 ±0.1
Notes: 1. All dimensions are in millimeters.
2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
24
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Electrical Specifications
Electrical Specifications
Absolute Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a stress rating
only, and functional operation of the device at these or any other conditions outside those indicated in
the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may adversely affect reliability.
Table 5: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
Notes
VDD
VDD supply voltage relative to VSS
–0.4
1.975
V
1
VDDQ
VDD supply voltage relative to VSSQ
–0.4
1.975
V
VIN, VOUT
Voltage on any pin relative to VSS
–0.4
1.975
V
TC
Operating case temperature – Commercial
0
95
2, 3
Operating case temperature – Industrial
–40
95
°C
Operating case temperature – Automotive
–40
105
2, 3
Operating case temperature – Ultra-high
–40
125
°C
Storage temperature
–55
150
TSTG
°C
°C
2, 3
2, 3
°C
Notes: 1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be greater than 0.6 × VDDQ.
When VDD and VDDQ are +95°C: all IDDx values must be derated (increased) by 30% from the 85°C specifications.
When TC > +105°C: all IDDx values must be derated (increased) by 50% from the 85°C specifications.
When TC >105°C: 8X refresh is required, self refresh mode is not available.
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
42
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Electrical Specifications – DC and AC
Electrical Specifications – DC and AC
DC Operating Conditions
Table 21: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions
Parameter/Condition
Supply voltage
I/O supply voltage
Input leakage current
Any input 0V ≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.1V
(All other pins not under test = 0V)
VREF supply leakage current
VREFDQ = VDD/2 or VREFCA = VDD/2
(All other pins not under test = 0V)
Symbol
Min
Nom
Max
Unit
Notes
VDD
1.283
1.35
1.45
V
1–7
VDDQ
1.283
1.35
1.45
V
1–7
II
–2
–
2
µA
IVREF
–1
–
1
µA
8, 9
Notes: 1. VDD and VDDQ must track one another. VDDQ must be ≤ VDD. VSS = VSSQ.
2. VDD and VDDQ may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC timing parameters.
3. Maximum DC value may not be greater than 1.425V. The DC value is the linear average of VDD/VDDQ(t) over a very
long period of time (for example, 1 second).
4. Under these supply voltages, the device operates to this DDR3L specification.
5. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
6. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifications under the same
speed timings as defined for this device.
7. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is in reset while VDD and VDDQ
are changed for DDR3 operation (see the VDD Voltage Switching figure).
8. The minimum limit requirement is for testing purposes. The leakage current on the VREF pin should be minimal.
9. VREF (see DDR3L 1.35V DC Electrical Characteristics and Input Conditions table).
10. All voltages are referenced to VSS.
CCMTD-1725822587-10208
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43
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Electrical Specifications – DC and AC
Input Operating Conditions
Table 22: DDR3L 1.35V DC Electrical Characteristics and Input Conditions
Parameter/Condition
Symbol
Min
Nom
Max
Unit
VIN low; DC/commands/address busses
VIL
VSS
N/A
See DDR3L
1.35V Input
Switching
Conditions –
Command
and Address
table
V
VIN high; DC/commands/address busses
VIH
See DDR3L
1.35V Input
Switching
Conditions –
Command
and Address
table
N/A
VDD
V
Input reference voltage command/address bus
VREFCA(DC)
2, 3
VREFDQ(SR)
VSS
VDD
V
4
VTT
–
0.5 × VDD
0.51 × VDD
V
I/O reference voltage DQ bus in SELF REFRESH
0.49 × VDD
0.51 × VDD
1, 2
VREFDQ(DC)
0.5 × VDD
V
I/O reference voltage DQ bus
0.49 × VDD
–
V
5
Command/address termination voltage
(system level, not direct DRAM input)
0.5 × VDD
0.5 ×
VDDQ
Notes
Notes: 1. VREFCA(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC level. Externally generated
peak noise (non-common mode) on VREFCA may not exceed ±1% × VDD around the VREFCA(DC) value. Peak-to-peak
AC noise on VREFCA should not exceed ±2% of VREFCA(DC).
2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifications if the DRAM
induces additional AC noise greater than 20 MHz in frequency.
3. VREFDQ(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC level. Externally generated
peak noise (non-common mode) on VREFDQ may not exceed ±1% × VDD around the VREFDQ(DC) value. Peak-to-peak
AC noise on VREFDQ should not exceed ±2% of VREFDQ(DC).
4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH, within restrictions outlined
in the SELF REFRESH section.
5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors. Minimum and
maximum values are system-dependent.
6. All voltages are referenced to VSS.
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
44
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Electrical Specifications – DC and AC
Table 23: DDR3L 1.35V Input Switching Conditions – Command and Address
Parameter/Condition
Symbol
DDR3L-800/1066
DDR3L-1333/1600
DDR3L-1866/2133
Units
Command and Address
VIH(AC160),min5
160
160
–
mV
VIH(AC135),min5
135
135
135
mV
VIH(AC125),min5
–
–
125
mV
Input high DC voltage: Logic 1
VIH(DC90),min
90
90
90
mV
Input low DC voltage: Logic 0
VIL(DC90),min
–90
–90
–90
mV
Input low AC voltage: Logic 0
VIL(AC125),min5
–
–
–125
mV
VIL(AC135),min5
–135
–135
–135
mV
VIL(AC160),min5
–160
–160
–
mV
Input high AC voltage: Logic 1
DQ and DM
VIH(AC160),min5
160
160
–
mV
VIH(AC135),min5
135
135
135
mV
VIH(AC125),min5
–
–
130
mV
Input high DC voltage: Logic 1
VIH(DC90),min
90
90
90
mV
Input low DC voltage: Logic 0
VIL(DC90),min
–90
–90
–90
mV
Input low AC voltage: Logic 0
VIL(AC125),min5
–
–
–130
mV
VIL(AC135),min5
–135
–135
–135
mV
VIL(AC160),min5
–160
–160
–
mV
Input high AC voltage: Logic 1
Notes: 1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All slew rates and setup/hold
times are specified at the DRAM ball. VREF is VREFDQ for DQ and DM inputs.
2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC).
3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC).
4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is 900mV (peak-to-peak).
5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific speed bin, the user may
choose either value for the input AC level. Whichever value is used, the associated setup time for that AC level
must also be used. Additionally, one VIH(AC) value may be used for address/command inputs and the other VIH(AC)
value may be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC160),min and VIH(AC135),min (corresponding
VIL(AC160),min and VIL(AC135),min). For DDR3-800, the address/command inputs must use either VIH(AC160),min with
tIS(AC160)
of 210ps or VIH(AC150),min with tIS(AC135) of 365ps; independently, the data inputs must use either
VIH(AC160),min with tDS(AC160) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Electrical Specifications – DC and AC
Table 24: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#)
Parameter/Condition
Symbol
Min
Max
Units
Notes
Differential input logic high – slew
VIH,diff(AC)slew
180
N/A
mV
4
Differential input logic low – slew
VIL,diff(AC)slew
N/A
–180
mV
4
Differential input logic high
VIH,diff(AC)
VDD/VDDQ
mV
5
Differential input logic low
VIL,diff(AC)
2 × (VIH(AC) - VREF)
mV
6
VIX
VREF(DC) - 150
2 × (VIL(AC) - VREF)
VREF(DC) + 150
mV
5, 7, 9
VIX (175)
VREF(DC) - 175
VREF(DC) + 175
mV
5, 7–9
VDDQ/2 + 160
VDDQ
mV
5
VDD/2 + 160
VDD
mV
5
VSSQ
VDDQ/2 - 160
mV
6
VSS
VDD/2 - 160
mV
6
Differential input crossing voltage
relative to VDD/2 for DQS, DQS#; CK,
CK#
Differential input crossing voltage
relative to VDD/2 for CK, CK#
Single-ended high level for strobes
Single-ended high level for CK, CK#
Single-ended low level for strobes
Single-ended low level for CK, CK#
VSS/VSSQ
VSEH
VSEL
Notes: 1.
2.
3.
4.
5.
6.
7.
Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ.
Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe.
Differential input slew rate = 2 V/ns.
Defines slew rate reference points, relative to input crossing voltages.
Minimum DC limit is relative to single-ended signals; overshoot specifications are applicable.
Maximum DC limit is relative to single-ended signals; undershoot specifications are applicable.
The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device, and VIX(AC) is expected to
track variations in VDD. VIX(AC) indicates the voltage at which differential input signals must cross.
8. The VIX extended range (±175mV) is allowed only for the clock; this VIX extended range is only allowed when the
following conditions are met: The single-ended input signals are monotonic, have the single-ended swing VSEL,
VSEH of at least VDD/2 ±250mV, and the differential slew rate of CK, CK# is greater than 3 V/ns.
9. VIX must provide 25mV (single-ended) of the voltages separation.
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
46
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Electrical Specifications – DC and AC
Figure 11: DDR3L 1.35V Input Signal
VIL and VIH levels with ringback
VDD + 0.4V
Narrow pulse width
VDD
Minimum VIL and VIH levels
VIH MIN(AC)
VIH MIN(DC)
VIH(AC)
VIH(DC)
VIL MIN(DC)
VIL MIN(AC)
VDDQ
VREF + 125/135/160mV
VIH(AC)
VREF + 90mV
VIH(DC)
VREF DC MAX + 1%
.51 x VDD
VREF = VDD/2
.49 x VDD
VREF DC MIN - 1% VDD
MAX 2% Total
VREF DC MAX
VREF
DC MIN
MAX 2% Total
VIL(DC)
VDDQ + 0.4V
Overshoot
VREFDQ + AC noise
VREFDQ + DC error
VREFDQ - DC error
VREFDQ - AC noise
VREF - 90mV
VIL(DC)
VREF - 125/135/160mV
VIL(AC)
VIL(AC)
0.0V
VSS - 0.40V
Narrow pulse width
VSS
VSS - 0.40V
Undershoot
Note: 1. Numbers in diagrams reflect nominal values.
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Electrical Specifications – DC and AC
DDR3L 1.35V AC Overshoot/Undershoot Specification
Table 25: DDR3L Control and Address Pins
DDR3L-800
DRR3L-1066
DDR3L-1333
DDR3L-1600
DDR3L-1866
DDR3L-2133
Maximum peak amplitude allowed for overshoot area
(see Overshoot figure)
Parameter
0.4V
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed for undershoot area
(see Undershoot figure)
0.4V
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area
above VDD (see Overshoot
figure)
0.67 V/ns
0.5 V/ns
0.4 V/ns
0.33 V/ns
0.28 V/ns
0.25 V/ns
Maximum undershoot
area below VSS (see
Undershoot figure)
0.67 V/ns
0.5 V/ns
0.4 V/ns
0.33 V/ns
0.28 V/ns
0.25 V/ns
Table 26: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins
Parameter
DDR3L-800
DDR3L-1066
DDR3L-1333
DDR3L-1600
DDR3L-1866
DDR3L-2133
Maximum peak amplitude allowed for overshoot area
(see Overshoot figure)
0.4V
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed for undershoot area
(see Undershoot figure)
0.4V
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area
above VDD/VDDQ (see
Overshoot figure)
0.25 V/ns
0.19 V/ns
0.15 V/ns
0.13 V/ns
0.11 V/ns
0.10 V/ns
Maximum undershoot
area below VSS/VSSQ (see
Undershoot figure)
0.25 V/ns
0.19 V/ns
0.15 V/ns
0.13 V/ns
0.11 V/ns
0.10 V/ns
Figure 12: Overshoot
Maximum amplitude
Overshoot area
Volts (V)
VDD/VDDQ
Time (ns)
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
48
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Electrical Specifications – DC and AC
Figure 13: Undershoot
VSS/VSSQ
Volts (V)
Undershoot area
Maximum amplitude
Time (ns)
Figure 14: VIX for Differential Signals
VDD, VDDQ
VDD, VDDQ
CK#, DQS#
CK#, DQS#
X
VIX
VIX
VDD/2, VDDQ/2
X
X
VDD/2, VDDQ/2
VIX
X
VIX
CK, DQS
CK, DQS
VSS, VSSQ
VSS, VSSQ
Figure 15: Single-Ended Requirements for Differential Signals
VDD or VDDQ
VSEH,min
VDD/2 or VDDQ/2
VSEH
CK or DQS
VSEL,max
VSEL
VSS or VSSQ
CCMTD-1725822587-10208
automotive_4gb_ddr3l_v00h.pdf - Rev. I 09/2021 EN
49
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
4Gb: x8, x16 Automotive DDR3L SDRAM
Electrical Specifications – DC and AC
Figure 16: Definition of Differential AC-Swing and tDVAC
tDVAC
VIH,diff(AC)min
VIH,diff,min
CK - CK#
DQS - DQS#
0.0
VIL,diff,max
VIL,diff(AC)max
tDVAC
Half cycle
Table 27: DDR3L 1.35V – Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC
Ringback
Slew Rate (V/ns)
DDR3L-800/1066/1333/1600
tDVAC
tDVAC
DDR3L-1866/2133
tDVAC
tDVAC
tDVAC
at
320mV (ps)
at
270mV (ps)
at
270mV (ps)
at
250mV (ps)
at
260mV (ps)
>4.0
189
201
163
168
176
4.0
189
201
163
168
176
3.0
162
179
140
147
154
2.0
109
134
95
105
111
1.8
91
119
80
91
97
1.6
69
100
62
74
78
1.4
40
76
37
52
55
1.2
Note 1
44
5
22
24
1.0
Note 1
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